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IRF7831PBF-1 PDF预览

IRF7831PBF-1

更新时间: 2024-11-20 19:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 250K
描述
Power Field-Effect Transistor

IRF7831PBF-1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
湿度敏感等级:1峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IRF7831PBF-1 数据手册

 浏览型号IRF7831PBF-1的Datasheet PDF文件第2页浏览型号IRF7831PBF-1的Datasheet PDF文件第3页浏览型号IRF7831PBF-1的Datasheet PDF文件第4页浏览型号IRF7831PBF-1的Datasheet PDF文件第5页浏览型号IRF7831PBF-1的Datasheet PDF文件第6页浏览型号IRF7831PBF-1的Datasheet PDF文件第7页 
IRF7831PbF-1  
HEXFET® Power MOSFET  
A
VDS  
30  
3.6  
40  
V
A
1
2
3
4
8
D
S
S
S
G
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
7
m
Ω
D
6
D
nC  
A
5
ID  
D
21  
(@TA = 25°C)  
SO-8  
Top View  
Applications  
l
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking and  
Computing Systems.  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF7831PbF-1  
IRF7831TRPbF-1  
IRF7831PbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
30  
± 12  
21  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
17  
A
170  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through „ are on page 10  
1
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Submit Datasheet Feedback  
November 20, 2013  

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