Datasheet > IRF8852PBF

IRF8852PBF

更新时间： 2024-11-02 12:36:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	276K
描述
Ultra Low On-Resistance

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数据手册

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IRF8852PBF 数据手册

PD - 96246

IRF8852PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.1mm)

l Available in Tape & Reel

l Lead-Free

V_DSS

25V

R_DS(on)max

11.3m @V_GS= 10V

15.4m @V_GS= 4.5V

7.8A

6.2A

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that

International Rectifier is well known for, provides the

designer with an extremely efficient and reliable

device for battery and load management.

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space is

at a premium. The low profile (<1.2mm) allows it to fit easily

into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

7.8

@ T_A= 70°C

6.2

62.4

1.0

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

0.64

Linear Derating Factor

Gate-to-Source Voltage

0.01

± 20

W/°C

Operating Junction and

-55 to + 150

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

125

Notes through ꢀ are on page 10

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

www.irf.com

07/30/09

12 3 4 5 6 7...10

中文翻译

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