Datasheet > IRF8736TRPBF-1

IRF8736TRPBF-1

更新时间： 2024-11-03 07:33:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	224K
描述
Small Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

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数据手册

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IRF8736TRPBF-1 数据手册

IRF8736PbF-1

HEXFET^®Power MOSFET

V_DS

4.8

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

(@T_A= 25°C)

SO-8

Top View

Applications

Synchronous MOSFET for Notebook Processor Power

Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF8736PbF-1

IRF8736TRPbF-1

IRF8736PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

14.4

144

2.5

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through ꢀ are on page 9

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November 22, 2013

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