是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SOP-8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 0.66 | Is Samacsys: | N |
雪崩能效等级(Eas): | 44 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 13.6 A |
最大漏极电流 (ID): | 13.6 A | 最大漏源导通电阻: | 0.0091 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MS-012AA |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 155 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 最大脉冲漏极电流 (IDM): | 100 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF8714TRPBF | INFINEON |
类似代替 |
HEXFETPower MOSFET | |
IRF7821PBF | INFINEON |
类似代替 |
HEXFET㈢Power MOSFET | |
IRF8714PBF | INFINEON |
类似代替 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7821TRPBF-1 | INFINEON |
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Small Signal Field-Effect Transistor | |
IRF7821UPBF | INFINEON |
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暂无描述 | |
IRF7821UTRPBF | INFINEON |
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Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, | |
IRF7822 | INFINEON |
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Power MOSFET for DC-DC Converters | |
IRF7822PBF | INFINEON |
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HEXFET㈢ Power MOSFET for DC-DC Converters | |
IRF7822TR | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7822TRPBF | INFINEON |
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N-Channel Application-Specific MOSFETs | |
IRF7823PBF | INFINEON |
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Power MOSFET Selection for Non-Isolated DC/DC Converters | |
IRF7828 | INFINEON |
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HEXFET Power MOSFET for DC-DC Converters | |
IRF7828PBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET for DC-DC Converters |