Datasheet > IRF8721

IRF8721

更新时间： 2024-11-24 11:14:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	237K
描述
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

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IRF8721 数据手册

PD - 97119

IRF8721PbF

HEXFET^®Power MOSFET

Applications

l Control MOSFET of Sync-Buck

Converters used for Notebook Processor

Power

V_DSS

30V

R_DS(on)max

8.3nC

8.5m @V = 10V

l Control MOSFET for Isolated DC-DC

Converters in Networking Systems

Benefits

l Very Low Gate Charge

l Low R_DS(on)at 4.5V V_GS

l Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l 20V V_GSMax. Gate Rating

l Lead-Free

SO-8

Top View

Description

The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-

tion and switching losses. The reduced total losses make this product ideal for high efficiency

DC-DC converters that power the latest generation of processors for Notebook and Netcom

applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

110

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through ꢀ are on page 9

www.irf.com

07/30/07

12 3 4 5 6 7...10

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