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IRF8721PBF

更新时间: 2024-11-02 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 230K
描述
HEXFET Power MOSFET

IRF8721PBF 数据手册

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PD - 97119  
IRF8721PbF  
HEXFET® Power MOSFET  
Applications  
l Control MOSFET of Sync-Buck  
Converters used for Notebook Processor  
Power  
VDSS  
30V  
RDS(on) max  
Qg  
8.3nC  
8.5m @V = 10V  
:
GS  
l Control MOSFET for Isolated DC-DC  
Converters in Networking Systems  
Benefits  
A
A
1
8
S
D
l Very Low Gate Charge  
2
7
S
D
l Low RDS(on) at 4.5V VGS  
3
6
S
D
l Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
l 20V VGS Max. Gate Rating  
l Lead-Free  
4
5
G
D
SO-8  
Top View  
Description  
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the  
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are  
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-  
tion and switching losses. The reduced total losses make this product ideal for high efficiency  
DC-DC converters that power the latest generation of processors for Notebook and Netcom  
applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
14  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
11  
A
110  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through are on page 9  
www.irf.com  
1
07/30/07  

IRF8721PBF 替代型号

型号 品牌 替代类型 描述 数据表
FDS6680A FAIRCHILD

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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时