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IRF8721GPBF PDF预览

IRF8721GPBF

更新时间: 2024-02-11 09:46:18
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 248K
描述
Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8

IRF8721GPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
雪崩能效等级(Eas):68 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.0085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):110 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF8721GPBF 数据手册

 浏览型号IRF8721GPBF的Datasheet PDF文件第2页浏览型号IRF8721GPBF的Datasheet PDF文件第3页浏览型号IRF8721GPBF的Datasheet PDF文件第4页浏览型号IRF8721GPBF的Datasheet PDF文件第5页浏览型号IRF8721GPBF的Datasheet PDF文件第6页浏览型号IRF8721GPBF的Datasheet PDF文件第7页 
PD - 96262  
IRF8721GPbF  
HEXFET® Power MOSFET  
Applications  
l Control MOSFET of Sync-Buck  
Converters used for Notebook Processor  
Power  
l Control MOSFET for Isolated DC-DC  
Converters in Networking Systems  
VDSS  
30V  
RDS(on) max  
Qg  
8.3nC  
8.5m @V = 10V  
GS  
A
A
D
Benefits  
1
8
S
l Very Low Gate Charge  
l Low RDS(on) at 4.5V VGS  
l Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
2
7
S
D
3
6
S
D
4
5
G
D
SO-8  
Top View  
l 20V VGS Max. Gate Rating  
l Lead-Free  
l Halogen-Free  
Description  
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the  
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are  
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC  
converters that power the latest generation of processors for Notebook and Netcom applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
VDS  
V
V
Gate-to-Source Voltage  
± 20  
14  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
11  
A
110  
2.5  
1.6  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
D
D
W
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
RθJL  
RθJA  
°C/W  
–––  
50  
Notes  through are on page 9  
www.irf.com  
1
07/10/09  

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