Datasheet > IRF7821TR

IRF7821TR

更新时间： 2024-10-01 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	496K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:13A;Vgs(th)(V):±20;漏源导通电阻:9.1mΩ@10V;漏源导通电阻:12.5mΩ@4.5V

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数据手册

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IRF7821TR 数据手册

IRF7821

UMW

30V N-Channel MOSFET

Applications

l High Frequency Point-of-Load

Synchronous Buck Converter for

Applications in Networking &

Computing Systems.

l Lead-Free

Top View

Benefits

l Very Low R_DS(on)at 4.5V V_GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

Features

l VDS (V) =30V

ID= 13 A

(V = 10V)

RDS(ON) ＜ 9.1m

Ω(V

=10V)

RDS(ON) ＜ 12.5 m

Ω(V

=4.5V)

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

13.6

@ T_A= 25°C

@ T_A= 70°C

100

2.5

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 155

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

Max.

Units

°C/W

R_θ

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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