Datasheet > IRF7821TRPBF-1

IRF7821TRPBF-1

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	255K
描述
Small Signal Field-Effect Transistor

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中文翻译

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数据手册

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IRF7821TRPBF-1 数据手册

IRF7821PbF-1

HEXFET^®Power MOSFET

V_DS

9.1

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

9.3

13.6

(@T_A= 25°C)

SO-8

Top View

Applications

l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking &

Computing Systems.

Features

Benefits

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7821PbF-1

IRF7821TRPbF-1

IRF7821PbF-1

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

± 20

13.6

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

100

2.5

Power Dissipation

@T_A= 25°C

@T_A= 70°C

Power Dissipation

1.6

Linear Derating Factor

Operating Junction and

0.02

-55 to + 155

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

°C/W

R_θ

–––

Notes through ꢀ are on page 10

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November 22, 2013

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