IRF7828TRPBF

更新时间： 2024-11-20 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
6页	480K
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中文翻译

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数据手册
替代型号

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IRF7828TRPBF 数据手册

PD - 9460±

IRF78±8

HEXFET^®Power MOSFET for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

SO-8

Top View

DEVICE CHARACTERISTICSꢀ

The IRF78±8 has been optimized for all parameters that

are critical in synchronous buck converters including

IRF7828

R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.

The IRF78±8 offers particulary low R_DS(on)and high Cdv/

dt immunity for synchronous FET applications.

R_DS

Q_G

9.5mΩ

9.±nC

3.7nC

6.1nC

(on)

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 3W is possible in a typical

PCB mount application.

Q_sw

Q_oss

Absolute Maximum Ratings

Parameter

Symbol

IRF7828

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

±±0

T_A= ±5°C

T_L= 70°C

13.6

I_DM

P_D

100

T_A= ±5°C

T_L= 70°C

±.5

1.6

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

T_J,T_STG

I_S

–55 to 150

3.1

°C

I_SM

100

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Max.

Units

°C/W

R_θJA

R_θJL

±0

1±/5/0±

12 3 4 5 6

中文翻译

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IRF7828TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF8714TRPBF	INFINEON	类似代替	HEXFETPower MOSFET

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