IRF7822TR

更新时间： 2024-11-20 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
6页	73K
描述
Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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IRF7822TR 数据手册

PD - 94279

IRF7822

HEXFET^®Power MOSFET for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge.The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

SO-8

Top View

DEVICE CHARACTERISTICSꢀ

The IRF7822 has been optimized for all parameters that

are critical in synchronous buck converters including

IRF7822

R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.

The IRF7822 offers particulary low R_DS(on)and high Cdv/

dt immunity for synchronous FET applications.

R_DS

Q_G

5.0mΩ

44nC

12nC

27nC

(on)

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 3W is possible in a typical

PCB mount application.

Q_sw

Q_oss

Absolute Maximum Ratings

Parameter

Symbol

IRF7822

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

±12

T_A= 25°C

T_A= 70°C

I_DM

P_D

150

T_A= 25°C

T_A= 70°C

3.1

3.0

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

T_J,T_STG

I_S

–55 to 150

3.8

°C

I_SM

150

Thermal Resistance

Parameter

Max.

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJA

R_θJL

www.irf.com

07/11/01

12 3 4 5 6

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