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IRF7815PBF PDF预览

IRF7815PBF

更新时间: 2024-11-24 12:08:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
9页 266K
描述
Synchronous MOSFET for Notebook Processor Power

IRF7815PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:695049Samacsys Pin Count:8
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Small Outline Packages
Samacsys Footprint Name:so-8_1Samacsys Released Date:2019-10-30 13:59:49
Is Samacsys:N雪崩能效等级(Eas):529 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):5.1 A
最大漏极电流 (ID):5.1 A最大漏源导通电阻:0.043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):41 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7815PBF 数据手册

 浏览型号IRF7815PBF的Datasheet PDF文件第2页浏览型号IRF7815PBF的Datasheet PDF文件第3页浏览型号IRF7815PBF的Datasheet PDF文件第4页浏览型号IRF7815PBF的Datasheet PDF文件第5页浏览型号IRF7815PBF的Datasheet PDF文件第6页浏览型号IRF7815PBF的Datasheet PDF文件第7页 
PD - 96284  
IRF7815PbF  
HEXFET® Power MOSFET  
Applications  
l Synchronous MOSFET for Notebook  
VDSS  
RDS(on) max  
Qg (typ.)  
25nC  
43m @VGS = 10V  
150V  
Processor Power  
l Synchronous Rectifier MOSFET for  
Isolated DC-DC Converters in  
Networking Systems  
A
A
D
1
8
S
Benefits  
2
7
S
D
l Very Low RDS(on) at 10V VGS  
l Low Gate Charge  
l Fully Characterized Avalanche Voltage  
and Current  
l 20V VGS Max. Gate Rating  
3
6
S
D
4
5
G
D
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
150  
± 20  
5.1  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
V
GS  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
4.1  
A
41  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
2.5  
W
D
D
Power Dissipation  
1.6  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
RθJL  
RθJA  
°C/W  
–––  
50  
Notes  through are on page 9  
www.irf.com  
1
12/01/09  

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