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IRF7809AV PDF预览

IRF7809AV

更新时间: 2024-10-01 22:31:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 114K
描述
N-Channel Application-Specific MOSFETs

IRF7809AV 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.12配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):13.3 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7809AV 数据手册

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PD-90010  
IRF7809AV  
• N-Channel Application-Specific MOSFETs  
• Ideal for CPU Core DC-DC Converters  
• Low Conduction Losses  
• Low Switching Losses  
• Minimizes Parallel MOSFETs for high current  
applications  
A
A
D
1
2
3
4
8
7
S
S
D
6
5
Description  
S
D
D
This new device employs advanced HEXFET Power  
MOSFET technology to achieve an unprecedented  
balance of on-resistance and gate charge.The reduced  
conduction and switching losses make it ideal for high  
efficiency DC-DC converters that power the latest  
generation of microprocessors.  
G
SO-8  
Top View  
The IRF7809AV has been optimized for all parameters  
that are critical in synchronous buck converters including  
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.  
The IRF7809AV offers particulary low RDS(on) and high  
Cdv/dt immunity for synchronous FET applications.  
DEVICE CHARACTERISTICSꢀ  
IRF7809AV  
RDS  
QG  
7.0mΩ  
41nC  
14nC  
30nC  
(on)  
The package is designed for vapor phase, infra-red,  
convection, or wave soldering techniques. Power  
dissipation of greater than 2W is possible in a typical  
PCB mount application.  
Qsw  
Qoss  
Absolute Maximum Ratings  
Parameter  
Symbol  
IRF7809A V  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain or Source  
Current (VGS 4.5V)  
Pulsed Drain Current  
Power Dissipation  
VDS  
VGS  
ID  
30  
±12  
V
TA = 25°C  
TL = 90°C  
13.3  
14.6  
100  
A
IDM  
PD  
TA = 25°C  
TL = 90°C  
2.5  
W
3.0  
Junction & Storage Temperature Range  
Continuous Source Current (Body Diode)  
Pulsed Source Current  
TJ,TSTG  
IS  
–55 to 150  
2.5  
°C  
A
ISM  
50  
Thermal Resistance  
Parameter  
Max.  
50  
Units  
°C/W  
°C/W  
Maximum Junction-to-Ambientƒ  
Maximum Junction-to-Lead  
RθJA  
RθJL  
20  
10/26/00  

IRF7809AV 替代型号

型号 品牌 替代类型 描述 数据表
IRF7809AVTR INFINEON

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