Datasheet > IRF7809ATR

IRF7809ATR

更新时间： 2024-11-24 19:48:11

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
4页	126K
描述
Power Field-Effect Transistor, 14.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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IRF7809ATR 数据手册

PD - 93810

PD - 93811

IIRRFF7788009A/IRF7811A

PROVISIONAL DATASHEET

HEXFET^®Chipset for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

Description

These new devices employ advanced HEXFET^®Power

MOSFET technology to achieve an unprecedented balance

of on-resistance and gate charge.The reduced conduction

and switching losses make them ideal for high efficiency

DC-DC converters that power the latest generation of

microprocessors.

SO-8

Top View

Both the IRF7809A and IRF7811A have been optimized

and are 100% tested for all parameters that are critical in

synchronous buck converters including R_DS(on), gate charge

and Cdv/dt-induced turn-on immunity.The IRF7809A offers

particulary low R_DS(on)and high Cdv/dt immunity for

synchronous FET applications.The IRF7811A offers an

extremely low combination of Q_sw& R_DS(on)for reduced

losses in control FET applications.

DEVICE RATINGS

IRF7809A IRF7811A

V_DS

30V

28V

12 mΩ

23 nC

7 nC

R_DS

Q_G

8.5 mΩ

73 nC

22.5 nC

30 nC

(on)

Q_sw

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical PCB

mount application.

Q_oss

31 nC

Absolute Maximum Ratings

Parameter

Symbol

IRF7809A

IRF7811A

Units

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±12

Continuous Drain or Source T_A= 25°C

14.5

14.2

100

11.4

11.2

100

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

T_L= 90°C

I_DM

P_D

T_A= 25°C

T_L= 90°C

2.5

2.4

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

T_J,T_STG

I_S

–55 to 150

°C

2.5

I_SM

Thermal Resistance

Parameter

Max.

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJA

R_θJL

www.irf.com

01/19/00

12 3 4

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