IRF7807VTR

更新时间： 2024-11-20 12:58:27

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	241K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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数据手册
替代型号

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IRF7807VTR 数据手册

PD – 91747C

IRF7807/IRF7807A

HEXFET^®Chip-Set for DC-DC Converters

• N Channel Application Specific MOSFETs

• Ideal for Mobile DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

Description

These new devices employ advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The

reduced conduction and switching losses make them

ideal for high efficiency DC-DC Converters that power

the latest generation of mobile microprocessors.

SO-8

Vds

Top View

Device Features

IRF7807 IRF7807A

A pair of IRF7807 devices provides the best cost/

performance solution for system voltages, such as 3.3V

and 5V.

30V

25mΩ

17nC

Rds(on) 25mΩ

17nC

Qsw

Qoss

5.2nC

16.8nC 16.8nC

Absolute Maximum Ratings

Parameter

Symbol

IRF7807

IRF7807A

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

±12

25°C

70°C

8.3

6.6

8.3

6.6

I_DM

P_D

25°C

70°C

2.5

1.6

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed source Current

T_J, T_STG

I_S

–55 to 150

°C

2.5

I_SM

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

R_θJA

°C/W

www.irf.com

10/10/00

12 3 4 5 6 7 8

中文翻译

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IRF7807VTR 替代型号

型号	品牌	替代类型	描述	数据表
IRF7807VTRPBF	INFINEON	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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