Datasheet > IRF7807VPBF-1

IRF7807VPBF-1

更新时间： 2024-11-25 01:21:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	218K
描述
Industry-standard pinout SO-8 Package

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中文翻译

获取价格

数据手册

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IRF7807VPBF-1 数据手册

IRF7807VTRPbF-1

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

9.5

8.3

I_D

(@T_A= 25°C)

SO-8

Top View

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Benefits

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Tape and Reel

Base Part Number

Package Type

Orderable Part Number

Quantity

4000

IRF7807VTRPbF-1

IRF7807VPbF-1

SO-8

Absolute Maximum Ratings

Parameter

Symbol

IRF7807V

Units

V_DS

Drain-Source Voltage

V_GS

±20

Gate-Source Voltage

T_A= 25°C

Continuous Drain or Source

(V_GS≥ 4.5V)

8.3

T_A= 70°C

6.6

Pulsed Drain Current

T_A= 25°C

T_A= 70°C

2.5

Power Dissipation

°C

1.6

-55 to 150

T_J, T

I_S

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

STG

2.5

Pulsed Source Current

I_SM

Thermal Resistance

Parameter

Symbol

R_θ_JA

Typ

–––

Max

Units

Maximum Junction-to-Ambient

°C/W

R_θ_JL

Maximum Junction-to-Lead

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October 16, 2014

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