是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 8.06 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 8.3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7807VD2PBF | INFINEON |
获取价格 |
FETKY MOSFET / SCHOTTKY DIODE |
![]() |
IRF7807VD2TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
![]() |
IRF7807VPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET |
![]() |
IRF7807VPBF-1 | INFINEON |
获取价格 |
Industry-standard pinout SO-8 Package |
![]() |
IRF7807VPBF-1_15 | INFINEON |
获取价格 |
Industry-standard pinout SO-8 Package |
![]() |
IRF7807VTR | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
![]() |
IRF7807VTRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
![]() |
IRF7807Z | INFINEON |
获取价格 |
HEXFET Power MOSFET |
![]() |
IRF7807ZPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
![]() |
IRF7807ZTR | INFINEON |
获取价格 |
Control FET for Notebook Processor Power |
![]() |