IRF7807VD1

更新时间： 2024-11-23 22:06:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体肖特基二极管晶体管开关光电二极管
页数	文件大小	规格书
9页	119K
描述
FETKY⑩ MOSFET / SCHOTTKY DIODE

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中文翻译

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数据手册

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IRF7807VD1 数据手册

PD-94078

IRF7807VD1

FETKY™ MOSFET / SCHOTTKY DIODE

• Co-Pack N-channel HEXFET Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters Up to 5A Output

• Low Conduction Losses

• Low Switching Losses

K/D

A/S

K/D

• Low Vf Schottky Rectifier

Top View

Description

SO-8

The FETKY^™family of Co-Pack HEXFET MOSFETs and

Schottky diodes offers the designer an innovative, board

space saving solution for switching regulator and power

management applications. HEXFET power MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

DEVICE CHARACTERISTICSꢀ

IRF7807VD1

R_DS

Q_G

17mΩ

9.5nC

3.4nC

12nC

(on)

Q_sw

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics.The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Q_oss

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_GS

±20

8.3

6.6

25°C

70°C

I_D

I_DM

P_D

25°C

70°C

25°C

70°C

2.5

1.6

3.5

2.2

Schottky and Body Diode

I_F(AV)

T_J,T_STG

Average ForwardCurrent

Junction & Storage Temperature Range

–55 to 150

°C

Thermal Resistance

Parameter

Max.

Units

°C/W

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

R_θJA

R_θJL

www.irf.com

03/05/01

12 3 4 5 6 7...9

中文翻译

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