型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7807TR | INFINEON |
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Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7807TR | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 |
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IRF7807TRPBF | INFINEON |
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HEXFET® Chip-Set for DC-DC Converters |
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IRF7807TRPBF-1 | INFINEON |
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Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |
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IRF7807V | INFINEON |
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N Channel Application Specific MOSFET |
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IRF7807VD1 | INFINEON |
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FETKY⑩ MOSFET / SCHOTTKY DIODE |
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IRF7807VD1PBF | INFINEON |
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HEXFET Power MOSFET |
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IRF7807VD1PBF-1 | INFINEON |
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Small Signal Field-Effect Transistor |
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IRF7807VD1TRPBF | INFINEON |
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Co-Pack N-channel HEXFET Power MOSFET and schottky diode |
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IRF7807VD1TRPBF-1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor |
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