5秒后页面跳转
IRF7807PBF-1_15 PDF预览

IRF7807PBF-1_15

更新时间: 2024-01-16 08:17:33
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 262K
描述
Industry-standard pinout SO-8 Package

IRF7807PBF-1_15 数据手册

 浏览型号IRF7807PBF-1_15的Datasheet PDF文件第2页浏览型号IRF7807PBF-1_15的Datasheet PDF文件第3页浏览型号IRF7807PBF-1_15的Datasheet PDF文件第4页浏览型号IRF7807PBF-1_15的Datasheet PDF文件第5页浏览型号IRF7807PBF-1_15的Datasheet PDF文件第6页浏览型号IRF7807PBF-1_15的Datasheet PDF文件第7页 
IRF7807TRPbF-1  
IRF7807ATRPbF-1  
HEXFET® Chip-Set for DC-DC Converters  
A
D
VDS  
30  
25  
12  
8.3  
V
1
2
3
4
8
S
S
RDS(on) max  
(@VGS = 4.5V)  
Qg (typical)  
ID  
7
D
m
Ω
6
5
S
D
D
nC  
A
G
(@TA = 25°C)  
Top View  
SO-8  
Features  
Industry-standard pinout SO-8 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Benefits  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
MSL1, Industrial qualification  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
IRF7807PbF-1  
IRF7807APbF-1  
Tape and Reel  
Tape and Reel  
4000  
4000  
IRF7807TRPbF-1  
IRF7807ATRPbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
IRF7807  
IRF7807A  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain or Source  
Current (VGS 4.5V)  
Pulsed Drain Current  
Power Dissipation  
30  
V
VGS  
±12  
25°C  
70°C  
ID  
8.3  
6.6  
66  
8.3  
6.6  
66  
A
IDM  
PD  
25°C  
70°C  
2.5  
1.6  
W
Junction & Storage Temperature Range  
Continuous Source Current (Body Diode)  
Pulsed source Current  
TJ, TSTG  
IS  
–55 to 150  
°C  
A
2.5  
66  
2.5  
66  
ISM  
Thermal Resistance  
Parameter  
Max.  
Units  
Maximum Junction-to-Ambientƒ  
RθJA  
50  
°C/W  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
October 16, 2014  

与IRF7807PBF-1_15相关器件

型号 品牌 获取价格 描述 数据表
IRF7807TR INFINEON

获取价格

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRF7807TR UMW

获取价格

种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时
IRF7807TRPBF INFINEON

获取价格

HEXFET® Chip-Set for DC-DC Converters
IRF7807TRPBF-1 INFINEON

获取价格

Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRF7807V INFINEON

获取价格

N Channel Application Specific MOSFET
IRF7807VD1 INFINEON

获取价格

FETKY⑩ MOSFET / SCHOTTKY DIODE
IRF7807VD1PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF7807VD1PBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor
IRF7807VD1TRPBF INFINEON

获取价格

Co-Pack N-channel HEXFET Power MOSFET and schottky diode
IRF7807VD1TRPBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor