Datasheet > IRF7807TR

IRF7807TR

更新时间： 2024-10-01 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	379K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:11A;Vgs(th)(V):±20;漏源导通电阻:13.8mΩ@10V;漏源导通电阻:18.2mΩ@4.5V

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IRF7807TR 数据手册

UMW

IRF7807

Features

VDS (V) = 30V

RDS(ON)

13.8m

18.2m

(VGS

= 10V)

RDS(ON)

(VGS = 4.5V)

Applications

ControlFETforNotebookProcessorPower

Synchronous Rectifier MOSFET for

Graphics Cards and POL Converters in

Networking and Telecommunication Systems

Top View

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

± 20

@ T_A= 25°C

@ T_A= 70°C

8.7

Power Dissipation

@T_A= 25°C

@T_A= 70°C

2.5

1.6

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θ

°C/W

–––

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting T_J= 25°C, L = 1.6mH

R_G= 25Ω, I_AS= 8.8A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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