Datasheet > IRF7494PBF

IRF7494PBF

更新时间： 2024-11-20 03:13:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	534K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF7494PBF 数据手册

PD - 95349B

IRF7494PbF

HEXFET^®Power MOSFET

V_DSS

150V

R_DS(on)max

44m @V_GS= 10V

I_D

5.2A

Applications

l High frequency DC-DC converters

l Lead-Free

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

Absolute Maximum Ratings

Parameter

Max.

150

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T = 25°C

5.2

3.7

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

@T = 25°C

3.0

Maximum Power Dissipation

Linear Derating Factor

0.02

3.0

-55 to + 150

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient (PCB Mount)

Typ.

–––

Max.

Units

°C/W

R_θJL

R_θJA

–––

Notes through are on page 8

www.irf.com

03/27/08

12 3 4 5 6 7 8

中文翻译

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IRF7494PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7815PBF	INFINEON	类似代替	Synchronous MOSFET for Notebook Processor Power
FDS2572	FAIRCHILD	功能相似	150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

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