5秒后页面跳转
IRF7504 PDF预览

IRF7504

更新时间: 2024-11-19 22:31:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 117K
描述
Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

IRF7504 数据手册

 浏览型号IRF7504的Datasheet PDF文件第2页浏览型号IRF7504的Datasheet PDF文件第3页浏览型号IRF7504的Datasheet PDF文件第4页浏览型号IRF7504的Datasheet PDF文件第5页浏览型号IRF7504的Datasheet PDF文件第6页浏览型号IRF7504的Datasheet PDF文件第7页 
PD - 9.1267G  
IRF7504  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l Dual P-Channel MOSFET  
l Very Small SOIC Package  
l Low Profile (<1.1mm)  
l Available in Tape & Reel  
l Fast Switching  
1
2
8
D 1  
S 1  
G 1  
VDSS = -20V  
7
D 1  
3
4
6
5
S 2  
G 2  
D 2  
D 2  
R
DS(on) = 0.27Ω  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
known for, provides the designer with an extremely efficient  
and reliable device for use in a wide variety of applications.  
The new Micro8 package, with half the footprint area of the  
standard SO-8, provides the smallest footprint available in  
an SOIC outline. This makes the Micro8 an ideal device for  
applications where printed circuit board space is at a  
premium. The low profile (<1.1mm) of the Micro8 will allow  
it to fit easily into extremely thin application environments  
such as portable electronics and PCMCIA cards.  
Micro8  
Absolute Maximum Ratings  
Parameter  
Max.  
-1.7  
-1.4  
-9.6  
1.25  
10  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
A
PD @TA = 25°C  
Power Dissipation  
W
mW/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
± 12  
-5.0  
dv/dt  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
V/ns  
°C  
TJ,TSTG  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient„  
Typ.  
–––  
Max.  
100  
Units  
°C/W  
RθJA  
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective  
only for product marked with Date Code 505 or later .  
8/25/97  

与IRF7504相关器件

型号 品牌 获取价格 描述 数据表
IRF7504PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF7504TR INFINEON

获取价格

Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Met
IRF7504TRPBF INFINEON

获取价格

暂无描述
IRF7506 INFINEON

获取价格

Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)
IRF7506PBF INFINEON

获取价格

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
IRF7506TR INFINEON

获取价格

Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Met
IRF7506TRPBF INFINEON

获取价格

Generation V Technology
IRF7507 INFINEON

获取价格

Power MOSFET(Vdss=+-20V)
IRF7507PBF INFINEON

获取价格

HEXFET㈢Power MOSFET
IRF7507PBF_15 INFINEON

获取价格

Ultra Low On-Resistance