PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
N-CHANNEL MOSFET
1
2
3
4
8
D1
S1
N-Ch P-Ch
7
G1
D1
6
5
VDSS 20V -20V
S2
D2
G2
D2
P-CHANNEL MOSFET
R
DS(on) 0.135Ω 0.27Ω
Top View
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
20
2.4
1.9
19
-20
-1.7
-1.4
-14
V
A
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.8
10
W
W
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
16
VGSM
dv/dt
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
V
5.0
-5.0
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Max.
100
Units
°C/W
Parameter
Maximum Junction-to-Ambient
RθJA
www.irf.com
1
5/11/04