IRF7534D1

更新时间： 2024-11-23 22:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	107K
描述
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7534D1 数据手册

PD-93864

IRF7534D1

FETKY MOSFET & Schottky Diode

●

Co-packaged HEXFET power

MOSFET and Schottky diode

Ultra Low On-Resistance

MOSFET

V_DSS= -20V

R_DS(on)= 0.055Ω

Schottky Vf=0.39V

●

Trench technology

Micro8^TMFootprint

Available in Tape & Reel

Top View

Description

The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer

an innovative, board space saving solution for switching regulator and power

management applications. International Rectifier utilizes advanced processing

techniques to achieve extremely low on-resistance per silicon area. Combining this

technology with International Rectifier’s low forward drop Schottky rectifiers results in

an extremely efficient device suitable for use in a wide variety of portable electronics

applications, such as cell phones, PDAs, etc.

Micro8

The Micro8^TMpackage makes an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.1mm) of the Micro8^TMwill allow it to

fit easily into extremely thin application environments such as portable electronics

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-4.3

-3.4

-34

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

mW/°C

V_GS

Gate-to-Source Voltage

± 12

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

1.1

V/ns

°C

T_J, T_STG

-55 to + 150

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

I_SD≤ -1.2A, di/dt ≤ 100A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Pulse width ≤ 300µs – duty cycle ≤ 2%

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

www.irf.com

3/22/00

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7534D1相关器件

型号	品牌	获取价格	描述	数据表
IRF7534D1PBF	INFINEON	获取价格	MOSFET SCHOTTKY DIODE
IRF7555	INFINEON	获取价格	Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)
IRF7555PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF7555TR	INFINEON	获取价格	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Me
IRF7580MPbF	INFINEON	获取价格	DirectFETÂ® N-Channel Power MOSFET
IRF7580MPBF_15	INFINEON	获取价格	Brushed motor drive applications
IRF7580MTRPBF	INFINEON	获取价格	DirectFETÂ® N-Channel Power MOSFET
IRF7601	INFINEON	获取价格	Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
IRF7601PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Me
IRF7601TR	INFINEON	获取价格	暂无描述