Datasheet > IRF7607TRHR

IRF7607TRHR

更新时间： 2024-11-24 21:14:27

品牌	Logo	应用领域
英飞凌 - INFINEON		脉冲光电二极管晶体管
页数	文件大小	规格书
8页	82K
描述
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8

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IRF7607TRHR 数据手册

PD - 93845A

IRF7607

HEXFET^®Power MOSFET

ꢀꢀꢀTrench Technology

ꢀꢀꢀUltra Low On-Resistance

ꢀꢀꢀN-Channel MOSFET

ꢀꢀꢀVery Small SOIC Package

ꢀꢀꢀLow Profile (<1.1mm)

ꢀꢀꢀAvailable in Tape & Reel

V_DSS= 20V

R_DS(on)= 0.030Ω

Top View

Description

New trench HEXFET power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

power MOSFETs are well known for, provides the designer

withanextremelyefficientandreliabledeviceforuseinawide

varietyofapplications.

The new Micro8 package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applicationswhereprintedcircuitboardspaceisatapremium.

Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily

intoextremelythinapplicationenvironmentssuchasportable

electronicsandPCMCIAcards.

Micro8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

6.5

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

Power Dissipation

5.2

P_D@T_A= 25°C

P_D@T_A= 70°C

1.8

Power Dissipation

1.2

Linear Derating Factor

0.014

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

02/26/01

12 3 4 5 6 7 8

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