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IRF7702TRPBF

更新时间： 2024-11-27 12:02:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	190K
描述
Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF7702TRPBF 数据手册

PD-96027

IRF7702PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l -1.8V Rated

V_DSS

R_DS(on)max

I_D

0.014@V_GS= -4.5V

0.019@V_GS= -2.5V

0.027@V_GS= -1.8V

-8.0A

-7.0A

-5.8A

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile ( < 1.1mm)

l Available in Tape & Reel

l Lead-Free

-12V

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

nationalRectifier iswellknownfor,providesthedesigner

with an extremely efficient and reliable device for

battery and load management.

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

±8.0

±7.0

±70

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

1.5

Power Dissipation

0.96

Linear Derating Factor

0.01

W/°C

V_GS

Gate-to-Source Voltage

± 8.0

-55 to + 150

T_J,T_STG

Junction and Storage Temperature Range

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

02/06/06

12 3 4 5 6 7 8

中文翻译

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