IRF7702

更新时间： 2024-09-15 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	140K
描述
Power MOSFET(Vdss=-12V)

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中文翻译

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数据手册

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IRF7702 数据手册

PD - 93849C

IRF7702

PROVISIONAL

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l -1.8V Rated

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile ( < 1.1mm)

l Available in Tape & Reel

V_DSS

R_DS(on)max

I_D

0.014@V_GS= -4.5V

0.019@V_GS= -2.5V

0.027@V_GS= -1.8V

-8.0A

-7.0A

-5.8A

-12V

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

nationalRectifier iswellknownfor,providesthedesigner

with an extremely efficient and reliable device for

battery and load management.

1 =

8 =

7 =

6 =

5 =

2 =

3 =

4 =

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-12

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

±8.0

±7.0

±70

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

1.5

Power Dissipation

0.96

0.01

± 8.0

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

6/19/00

12 3 4 5 6 7 8

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