Datasheet > IRF7706GTRPBF

IRF7706GTRPBF

更新时间： 2024-11-05 22:58:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	234K
描述
MOSFET P-CH 30V 7A 8-TSSOP

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中文翻译

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数据手册

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IRF7706GTRPBF 数据手册

PD-96143A

IRF7706GPbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

l Available in Tape & Reel

l Lead-Free

V_DSS

-30V

R_DS(on)max

22mΩ@V_GS= -10V

36mΩ@V_GS= -4.5V

I_D

-7.0A

-5.6A

l Halogen-Free

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for, provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-30

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-7.0

-5.7

-28

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.51

0.96

0.01

W/°C

V_GS

Gate-to-Source Voltage

± 20

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

05/15/09

12 3 4 5 6 7 8

中文翻译

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