IRF7703

更新时间： 2024-11-08 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	139K
描述
Power MOSFET(Vdss=-40V)

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数据手册

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IRF7703 数据手册

PD - 94221

IRF7703

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

l Available in Tape & Reel

V_DSS

-40V

R_DS(on)max (mΩ)

28@V_GS= -10V

I_D

-6.0A

45@V_GS= -4.5V

-4.8A

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for, provides the de-

signer with an extremely efficient and reliable device

for battery and load management.

1 =

8 =

7 =

6 =

5 =

2 =

3 =

4 =

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-40

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-6.0

-4.7

-24

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

1.5

Power Dissipation

0.96

0.012

± 20

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

05/11/01

12 3 4 5 6 7...9

中文翻译

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