Datasheet > IRF7738L2TR1PBF

IRF7738L2TR1PBF

更新时间： 2024-11-29 21:21:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	224K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRF7738L2TR1PBF 数据手册

IRF7738L2TRPbF

IRF7738L2TR1PbF

DirectFET^®Power MOSFET

Features

V_(BR)DSS

40V

Advanced Process Technology

OptimizedforMotorDrive, DC-DCand

other Heavy Load Applications

Exceptionally Small Footprint and Low Profile

High Power Density

Low Parasitic Parameters

Dual Sided Cooling

R_DS(on)typ.

1.2m

1.6m



max.

I_{D (Silicon Limited)}

Q_g

184A

129nC

RepetitiveAvalancheCapabilityforRobustnessand

Reliability

Lead free, RoHS Compliant and Halogen free

DirectFETISOMETRIC

Applicable DirectFET^®Outline and Substrate Outline

Description

The IRF7738L2TR(1)PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^®packaging to achieve the lowest on-

state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout

geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-

1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer.

This HEXFET^®Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET^®packaging platform

coupled with the latest silicon technology allows the IRF7738L2TR(1)PbF to offer substantial system level savings and performance improvement specifically

in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance

and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These

features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional

operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions

for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

184

130

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T_A= 25°C

I_D@ T_C= 25°C

315

736

@T_C= 25°C

@T_A= 25°C

Power Dissipation

3.3

Power Dissipation

E_AS

134

538

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.18a, 18b, 16, 17

270

E_AR

Repetitive Avalanche Energy

Peak Soldering Temperature

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

Max.

Units

°C/W

W/°C

R_JA

Junction-to-Ambient

R_JA

Junction-to-Ambient

Junction-to-Can

–––

1.6

R_JA

R_JCan

R_J-PCB

–––

Junction-to-PCB Mounted

Linear Derating Factor

0.5

0.63

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

February 4, 2013

12 3 4 5 6 7...10

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与IRF7738L2TR1PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7739L1	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRF7739L1PBF	INFINEON	获取价格	Optimized for Synchronous Rectification
IRF7739L1PBF_15	INFINEON	获取价格	Optimized for Synchronous Rectification
IRF7739L1TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF7739L1TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
IRF7739L2TR1PBF	INFINEON	获取价格	Power Field-Effect Transistor, 375A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Me
IRF7739L2TRPBF	INFINEON	获取价格	Benchmark MOSFETs Product Selection Guide
IRF7748L1PBF	INFINEON	获取价格	DirectFETâ¢ Power MOSFET
IRF7748L1PBF_15	INFINEON	获取价格	Optimized for Synchronous Rectification
IRF7748L1TRPBF	INFINEON	获取价格	DirectFETâ¢ Power MOSFET

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