IRF7750

更新时间： 2024-11-28 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管光电二极管
页数	文件大小	规格书
7页	112K
描述
Power MOSFET(Vdss=-20V, Rds(on)=0.030ohm)

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中文翻译

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数据手册

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IRF7750 数据手册

PD - 93848A

IRF7750

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Very Small SOIC Package

l Low Profile ( < 1.1mm)

l Available in Tape & Reel

V_DSS= -20V

R_DS(on)= 0.030Ω

TSSOP-8

Description

HEXFET^®power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

lowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifier

is well known for, provides the designer with an extremely efficient and reliable device for battery and load

management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device

for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into

extremely thin environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

±4.7

±3.8

±38

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

1.0

Power Dissipation

0.64

Linear Derating Factor

0.008

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

125

Units

°C/W

R_θJA

www.irf.com

5/25/2000

12 3 4 5 6 7

中文翻译

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