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IRF7769L1

更新时间： 2024-11-28 11:11:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 569K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

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IRF7769L1 数据手册

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IRF7769L1TRPbF  
DirectFET™ Power MOSFET  
Typical values (unless otherwise specified)  
Applications  
VDSS  
VGS  
±20V max  
Qgd  
RDS(on)  
2.8m@ 10V  
Vgs(th)  
RoHS Compliant, Halogen Free   
Lead-Free (Qualified up to 260°C Reflow)   
Ideal for High Performance Isolated Converter  
Primary Switch Socket  
100V min  
Qg tot  
Optimized for Synchronous Rectification  
Low Conduction Losses  
200nC  
110nC  
2.7V  
High Cdv/dt Immunity  
Low Profile (<0.7mm)  
S
S
S
S
S
S
Dual Sided Cooling Compatible   
Compatible with existing Surface Mount Techniques   
Industrial Qualified  
G
D
D
S
S
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging  
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The  
DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor  
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods  
and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.  
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses  
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for  
system reliability improvements, and makes this device ideal for high performance power converters.  
Ordering Information  
Standard Pack  
Part number  
Package Type  
Note  
Form  
Quantity  
IRF7769L1TRPbF  
DirectFET Large Can  
Tape and Reel  
4000  
“TR” suffix  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
100  
±20  
124  
88  
V
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TA = 25°C  
ID @ TC = 25°C  
IDM  
EAS  
IAR  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)   
Pulsed Drain Current  
20  
A
375  
500  
260  
74  
Single Pulse Avalanche Energy   
mJ  
A
Avalanche Current   
12.00  
10.00  
8.00  
6.00  
4.00  
2.00  
3.10  
I
= 74A  
T = 25°C  
A
D
V
= 7.0V  
GS  
3.00  
2.90  
2.80  
V
= 8.0V  
= 10V  
GS  
V
GS  
T
= 125°C  
= 25°C  
J
V
= 15V  
GS  
T
J
0.00  
2.0  
20  
40  
60  
, Drain Current (A)  
80  
100  
4.0  
V
6.0  
8.0 10.0 12.0 14.0 16.0  
I
D
, Gate-to-Source Voltage (V)  
GS  
Fig 2. Typical On-Resistance vs. Drain Current  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes  
Click on this section to link to the appropriate technical paper.  
Click on this section to link to the DirectFET Website.  
Surface mounted on 1 in. square Cu board, steady state.  
TC measured with thermocouple mounted to top (Drain) of part.  
Repetitive rating; pulse width limited by max. junction temperature.  
Starting TJ = 25°C, L = 0.09mH, RG = 25, IAS = 74A.  
1
2016-10-14  
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