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IRF7754GPBF

更新时间： 2024-11-27 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	237K
描述
HEXFET® Power MOSFET Ultra Low On-Resistance

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中文翻译

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数据手册

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IRF7754GPBF 数据手册

PD-96152A

IRF7754GPbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

l Available in Tape & Reel

l Lead-Free

V_DSS

-12V

R_DS(on)max

I_D

25mΩ@V_GS= -4.5V

34mΩ@V_GS= -2.5V

49mΩ@V_GS= -1.8V

-5.4A

-4.6A

-3.9A

l Halogen-Free

Description

HEXFET^®Power MOSFETs from International Rectifier

utilizeadvancedprocessingtechniquestoachieveextremely

lowon-resistancepersiliconarea.Thisbenefit,combined

withtheruggedizeddevicedesign,thatInternationalRectifier

iswellknownfor,providesthedesignerwithanextremely

efficient and reliable device for battery and load

management.

TSSOP-8

TheTSSOP-8packagehas45%lessfootprintareathanthe

standardSO-8.ThismakestheTSSOP-8anidealdevicefor

applicationswhereprintedcircuitboardspaceisatapremium.

Thelowprofile(<1.2mm)allowsittofiteasilyintoextremely

thinenvironmentssuchasportableelectronicsandPCMCIA

cards.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-12

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-5.5

-4.4

-22

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.64

0.01

±8

W/°C

V_GS

Gate-to-Source Voltage

T_J, T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

125

Units

°C/W

R_θJA

www.irf.com

05/14/09

12 3 4 5 6 7...9

中文翻译

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