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IRF7779L2PBF_15

更新时间： 2024-11-30 01:19:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 266K
描述
Optimized for Synchronous Rectification

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IRF7779L2PBF_15 数据手册

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IRF7779L2PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant, Halogen Free   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
VDSS  
VGS  
RDS(on)  
9.0mΩ@ 10V  
Vgs(th)  
150V min ±20V max  
Qg tot  
Qgd  
l Low Conduction Losses  
97nC  
33nC  
4.0V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
l Industrial Qualified  
S
S
S
S
S
S
S
S
G
D
D
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems.  
The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in  
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance power converters.  
Standard Pack  
Form  
Tape and Reel  
Tape and Reel  
Orderable part number  
Package Type  
Note  
Quantity  
4000  
1000  
IRF7779L2TRPbF  
IRF7779L2TR1PbF  
DirectFET2 Large Can  
DirectFET2 Large Can  
"TR" suffix  
"TR1" suffix EOL notice # 264  
Absolute Maximum Ratings  
Max.  
150  
±20  
67  
47  
11  
375  
270  
270  
40  
Parameter  
Units  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
VDS  
VGS  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
Single Pulse Avalanche Energy  
mJ  
A
EAS  
Avalanche Current  
IAR  
20.00  
16.00  
12.00  
8.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
T = 25°C  
C
I
= 40A  
D
V
V
V
V
= 7.0V  
GS  
GS  
GS  
GS  
= 8.0V  
= 10V  
= 15V  
T
= 125°C  
= 25°C  
J
T
J
4.0  
6.0  
V
8.0  
10.0 12.0 14.0 16.0  
50  
70  
90  
110  
, Gate-to-Source Voltage (V)  
GS  
I , Drain Current (A)  
D
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Drain Current  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.33mH, RG = 25Ω, IAS = 40A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
May 6, 2014  
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