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IRF7805ATRPBF

更新时间： 2024-11-27 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体转换器晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	238K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

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IRF7805ATRPBF 数据手册

PD – 91746C

IRF7805/IRF7805A

HEXFET^®Chip-Set for DC-DC Converters

• N Channel Application Specific MOSFETs

• Ideal for Mobile DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

Description

These new devices employ advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The

reduced conduction and switching losses make them

ideal for high efficiency DC-DC Converters that power

the latest generation of mobile microprocessors.

SO-8

Top View

Device Features

IRF7805 IRF7805A

The IRF7805/IRF7805A offers maximum efficiency for

mobile CPU core DC-DC converters.

Vds

30V

11mΩ

31nC

Rds(on) 11mΩ

Qsw

Qoss

31nC

11.5nC

36nC

Absolute Maximum Ratings

Parameter

Symbol

IRF7805

IRF7805A

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

V_DS

V_GS

I_D

±12

25°C

70°C

I_DM

P_D

100

25°C

70°C

2.5

1.6

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed source Current

T_J, T_STG

I_S

–55 to 150

°C

2.5

I_SM

106

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

R_θJA

°C/W

www.irf.com

10/10/00

12 3 4 5 6 7 8

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IRF7805ATRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7805TRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Met

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