5秒后页面跳转
IRF7805TRPBF PDF预览

IRF7805TRPBF

更新时间: 2024-01-22 06:54:00
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 238K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

IRF7805TRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
风险等级:5.62配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7805TRPBF 数据手册

 浏览型号IRF7805TRPBF的Datasheet PDF文件第2页浏览型号IRF7805TRPBF的Datasheet PDF文件第3页浏览型号IRF7805TRPBF的Datasheet PDF文件第4页浏览型号IRF7805TRPBF的Datasheet PDF文件第5页浏览型号IRF7805TRPBF的Datasheet PDF文件第6页浏览型号IRF7805TRPBF的Datasheet PDF文件第7页 
PD – 91746C  
IRF7805/IRF7805A  
HEXFET® Chip-Set for DC-DC Converters  
• N Channel Application Specific MOSFETs  
• Ideal for Mobile DC-DC Converters  
• Low Conduction Losses  
A
D
1
8
S
S
2
3
4
7
6
5
D
• Low Switching Losses  
S
D
D
Description  
G
These new devices employ advanced HEXFET Power  
MOSFET technology to achieve an unprecedented  
balance of on-resistance and gate charge. The  
reduced conduction and switching losses make them  
ideal for high efficiency DC-DC Converters that power  
the latest generation of mobile microprocessors.  
SO-8  
Top View  
Device Features  
IRF7805 IRF7805A  
The IRF7805/IRF7805A offers maximum efficiency for  
mobile CPU core DC-DC converters.  
Vds  
30V  
30V  
11mΩ  
31nC  
Rds(on) 11mΩ  
Qg  
Qsw  
Qoss  
31nC  
11.5nC  
36nC  
36nC  
Absolute Maximum Ratings  
Parameter  
Symbol  
IRF7805  
IRF7805A  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain or Source  
Current (VGS 4.5V)  
Pulsed Drain Current  
Power Dissipation  
VDS  
VGS  
ID  
30  
V
±12  
25°C  
70°C  
13  
10  
13  
10  
A
IDM  
PD  
100  
100  
25°C  
70°C  
2.5  
1.6  
W
Junction & Storage Temperature Range  
Continuous Source Current (Body Diode)  
Pulsed source Current  
TJ, TSTG  
IS  
–55 to 150  
°C  
A
2.5  
2.5  
ISM  
106  
106  
Thermal Resistance  
Parameter  
Max.  
Units  
Maximum Junction-to-Ambientƒ  
RθJA  
50  
°C/W  
www.irf.com  
1
10/10/00  

IRF7805TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7805ATRPBF INFINEON

类似代替

Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRF7805PBF INFINEON

类似代替

HEXFET㈢ Chip-Set for DC-DC Converters
IRF7805 INFINEON

类似代替

Chip-Set for DC-DC Converters

与IRF7805TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF7805TRPbF-1 INFINEON

获取价格

HEXFET® Chip-Set for DC-DC Converters
IRF7805Z INFINEON

获取价格

HEXFET Power MOSFET
IRF7805Z(KRF7805Z) KEXIN

获取价格

N-Channel MOSFET
IRF7805ZGTRPBF INFINEON

获取价格

High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & C
IRF7805ZPBF INFINEON

获取价格

High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & C
IRF7805ZPBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor
IRF7805ZTRPBF INFINEON

获取价格

High Frequency Point-of-Load Synchronous Buck Converter
IRF7805ZTRPBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
IRF7805ZUPBF INFINEON

获取价格

Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
IRF7805ZUTRPBF INFINEON

获取价格

Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SOP-8