IRF7807D1

更新时间： 2024-11-23 22:06:47

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	169K
描述
MOSFET / SCHOTTKY DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7807D1 数据手册

PD- 93761

IRF7807D1

FETKY™ MOSFET / SCHOTTKY DIODE

• Co-Pack N-channel HEXFET Power MOSFET

and Schottky Diode

• Ideal for Synchronous Rectifiers in DC-DC

Converters Up to 5A Output

• Low Conduction Losses

• Low Switching Losses

K/D

A/S

K/D

• Low Vf Schottky Rectifier

SO-8

Top View

Description

The FETKY^™family of Co-Pack HEXFET MOSFETs and

Schottky diodes offers the designer an innovative, board

space saving solution for switching regulator and power

management applications. HEXFET power MOSFETs

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. Combining

this technology with International Rectifier’s low forward

drop Schottky rectifiers results in an extremely efficient

device suitable for use in a wide variety of portable

electronics applications.

Device Features (Max Values)

IRF7807D1

V_DS

30V

R_DS(on)

Q_g

25mΩ

14nC

Q_sw

Q_oss

5.2nC

18.4nC

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics.The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V_GS≥ 4.5V)

Pulsed Drain Current

Power Dissipation

±12

V_GS

25°C

70°C

I_D

8.3

6.6

I_DM

P_D

25°C

70°C

25°C

70°C

2.5

1.6

Schottky and Body Diode

I_F(AV)

T_J,T_STG

3.5

Average ForwardCurrent

2.2

Junction & Storage Temperature Range

–55 to 150

°C

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

R_θJA

°C/W

www.irf.com

11/8/99

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF7807D1相关器件

型号	品牌	获取价格	描述	数据表
IRF7807D1PBF	INFINEON	获取价格	FETKY MOSFET / SCHOTTKY DIODE
IRF7807D1-TR	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRF7807D1TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRF7807D2	INFINEON	获取价格	MOSFET / SCHOTTKY DIODE
IRF7807D2PBF	INFINEON	获取价格	FETKY⑩ MOSFET / SCHOTTKY DIODE
IRF7807D2TR	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRF7807D2TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRF7807PBF	INFINEON	获取价格	HEXFET㈢ Chip-Set for DC-DC Converters
IRF7807PBF-1	INFINEON	获取价格	Industry-standard pinout SO-8 Package
IRF7807PBF-1_15	INFINEON	获取价格	Industry-standard pinout SO-8 Package