是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 63 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0138 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 88 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF7807TR | INFINEON |
类似代替 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807A | INFINEON |
类似代替 |
Chip-Set for DC-DC Converters | |
IRF7807TRPBF | INFINEON |
功能相似 |
HEXFET® Chip-Set for DC-DC Converters |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7807A | INFINEON |
获取价格 |
Chip-Set for DC-DC Converters | |
IRF7807APBF | INFINEON |
获取价格 |
HEXFET㈢ Chip-Set for DC-DC Converters | |
IRF7807APBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807ATR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807ATRPBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807D1 | INFINEON |
获取价格 |
MOSFET / SCHOTTKY DIODE | |
IRF7807D1PBF | INFINEON |
获取价格 |
FETKY MOSFET / SCHOTTKY DIODE | |
IRF7807D1-TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807D1TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRF7807D2 | INFINEON |
获取价格 |
MOSFET / SCHOTTKY DIODE |