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IRF7805PBF PDF预览

IRF7805PBF

更新时间: 2024-11-20 03:35:47
品牌 Logo 应用领域
英飞凌 - INFINEON 转换器PC
页数 文件大小 规格书
5页 226K
描述
HEXFET㈢ Chip-Set for DC-DC Converters

IRF7805PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.48
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:651847Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SO-8Samacsys Released Date:2017-02-23 15:54:55
Is Samacsys:NBase Number Matches:1

IRF7805PBF 数据手册

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PD – 96031A  
IRF7805PbF  
HEXFET® Chip-Set for DC-DC Converters  
• N Channel Application Specific MOSFETs  
• Ideal for Mobile DC-DC Converters  
• Low Conduction Losses  
A
D
1
8
S
S
2
3
4
7
6
5
D
• Low Switching Losses  
• Lead-Free  
S
D
D
G
Description  
This new device employs advanced HEXFET Power  
MOSFET technology to achieve an unprecedented  
balance of on-resistance and gate charge. The  
reduced conduction and switching losses make this  
device ideal for high efficiency DC-DC Converters that  
power the latest generation of mobile  
microprocessors.  
SO-8  
Top View  
Device Features  
IRF7805PbF  
30V  
VDS  
11m  
RDS(on)  
The IRF7805PbF offers maximum efficiency for  
mobile CPU core DC-DC converters.  
Qg  
31nC  
Qsw  
Qoss  
11.5nC  
36nC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
30  
± 12  
13  
V
V
GS  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
10  
A
100  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
W/°C  
°C  
T
T
-55 to + 150  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
www.irf.com  
1
01/09/08  

IRF7805PBF 替代型号

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