是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
风险等级: | 5.62 | 雪崩能效等级(Eas): | 72 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 16 A | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.0068 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 最大脉冲漏极电流 (IDM): | 120 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7805ZUTRPBF | INFINEON |
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Small Signal Field-Effect Transistor, 1-Element, Silicon, MS-012AA, LEAD FREE, SOP-8 | |
IRF7807 | INFINEON |
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Chip-Set for DC-DC Converters | |
IRF7807A | INFINEON |
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Chip-Set for DC-DC Converters | |
IRF7807APBF | INFINEON |
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HEXFET㈢ Chip-Set for DC-DC Converters | |
IRF7807APBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807ATR | INFINEON |
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Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807ATRPBF-1 | INFINEON |
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Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
IRF7807D1 | INFINEON |
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MOSFET / SCHOTTKY DIODE | |
IRF7807D1PBF | INFINEON |
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FETKY MOSFET / SCHOTTKY DIODE | |
IRF7807D1-TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Me |