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IRF7805ZUPBF PDF预览

IRF7805ZUPBF

更新时间: 2024-01-24 23:02:18
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 259K
描述
Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

IRF7805ZUPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
风险等级:5.62雪崩能效等级(Eas):72 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.0068 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF7805ZUPBF 数据手册

 浏览型号IRF7805ZUPBF的Datasheet PDF文件第2页浏览型号IRF7805ZUPBF的Datasheet PDF文件第3页浏览型号IRF7805ZUPBF的Datasheet PDF文件第4页浏览型号IRF7805ZUPBF的Datasheet PDF文件第5页浏览型号IRF7805ZUPBF的Datasheet PDF文件第6页浏览型号IRF7805ZUPBF的Datasheet PDF文件第7页 
PD - 96074A  
IRF7805ZUPbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
30V  
RDS(on) max  
Qg (typ.)  
18nC  
l High Frequency Point-of-Load  
Synchronous Buck Converter for  
Applications in Networking &  
Computing Systems  
6.8m @VGS = 10V  
A
A
D
l
Lead-Free  
1
8
S
Benefits  
2
7
S
D
l Very Low RDS(on) at 4.5V VGS  
l Ultra-Low Gate Impedance  
l Fully Characterized Avalanche  
Voltage and Current  
3
6
S
D
4
5
G
D
SO-8  
Top View  
l 100% tested for Rg  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
V
± 20  
16  
GS  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
12  
A
120  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through are on page 10  
www.irf.com  
1
09/18/06  

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