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IRF7805ZTRPBF-1 PDF预览

IRF7805ZTRPBF-1

更新时间: 2024-11-20 15:35:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 255K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

IRF7805ZTRPBF-1 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
配置:Single最大漏极电流 (Abs) (ID):16 A
FET 技术:METAL-OXIDE SEMICONDUCTOR湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
子类别:FET General Purpose Power表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IRF7805ZTRPBF-1 数据手册

 浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第2页浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第3页浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第4页浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第5页浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第6页浏览型号IRF7805ZTRPBF-1的Datasheet PDF文件第7页 
IRF7805ZPbF-1  
HEXFET® Power MOSFET  
VDS  
30  
6.8  
18  
V
A
A
D
1
2
3
4
8
S
S
S
G
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
m
Ω
7
D
nC  
A
6
D
ID  
5
D
16  
(@TA = 25°C)  
SO-8  
Top View  
Applications  
l
High Frequency Point-of-Load Synchronous Buck Converter for Applications in  
Networking & Computing Systems.  
Features  
Industry-standard pinout SO-8 Package  
Benefits  
Multi-Vendor Compatibility  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial qualification  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF7805ZPbF-1  
IRF7805ZTRPbF-1  
IRF7805ZPbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
30  
± 20  
16  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
12  
A
120  
2.5  
1.6  
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
W
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through are on page 10  
1
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
November 20, 2013  

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