IRF7755

更新时间： 2024-11-26 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	250K
描述
Power MOSFET(Vdss=-20V)

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中文翻译

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数据手册

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IRF7755 数据手册

PD -93995A

IRF7755

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

V_DSS

-20V

R_DS(on)max

51mΩ@V_GS= -4.5V

I_D

-3.7A

86mΩ@V_GS= -2.5V

-2.8A

l Available in Tape & Reel

Description

HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

nationalRectifier iswellknownfor,providesthedesigner

with an extremely efficient and reliable device for

battery and load management.

1 = D1

8 = D2

7 = S2

6 = S2

5 = G2

2 = S1

3 = S1

4 = G1

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-3.9

-3.1

-15

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

0.64

0.01

±20

W/°C

V_GS

Gate-to-Source Voltage

T_J, T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

125

°C/W

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中文翻译

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