IRF7751GTRPBF

更新时间： 2024-11-27 12:59:55

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英飞凌 - INFINEON		/
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IRF7751GTRPBF 数据手册

PD - 94002

IRF7751

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l Dual P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

V_DSS

-30V

R_DS(on)max

35mΩ@V_GS= -10V

55mΩ@V_GS= -4.5V

I_D

-4.5A

-3.8A

l Available in Tape & Reel

Description

HEXFET^®power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for, provides the de-

signer with an extremely efficient and reliable device

for use in battery and load management.

1 = D1

2 = S1

3 = S1

4 = G1

8 = D2

7 = S2

6 = S2

5 = G2

TSSOP-8

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Max.

-30

Units

V_DS

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-4.5

-3.6

-18

P_D@T_C= 25°C

P_D@T_C= 70°C

Power Dissipation

1.0

0.64

Linear Derating Factor

0.008

±20

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

125

Units

°C/W

R_θJA

www.irf.com

10/04/2000

12 3 4 5 6 7 8

中文翻译

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