Datasheet > IRF7749L1

IRF7749L1

更新时间： 2024-11-06 11:13:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
18页	1111K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET L8 封装，额定电流为33 A。

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数据手册

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IRF7749L1 数据手册

IRF7749L1TRPbF

DirectFET™ N-Channel Power MOSFET

IR MOSFET-DirectFET™

V_DSS

60V

IRF7749L1TRPbF

R_DS(on)typ.

@ V_{GS =}10V

R_DS(on)max

@ V_GS= 10V

1.1m

Quality Requirement Category: Industrial

1.5m

I_{D (Silicon Limited)}

345A 

375A 

I_{D (Package Limited)}

Applications



RoHS Compliant, Halogen Free

Lead-Free (Qualified up to 260°C Reflow)

Ideal for High Performance Isolated Converter Primary

Switch Socket



Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

DirectFET™ ISOMETRIC

Gate

Drain

Source

Standard Pack

Base part number

Package Type

DirectFET™ Large Can (LA) Tape and Reel

Orderable Part Number

IRF7749L1TRPbF

Form

Quantity

IRF7749L1TRPbF

4000

8.0

6.0

4.0

2.0

0.0

= 25°C

= 120A

Vgs = 5.5V

Vgs = 6.0V

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 12V

T = 125°C

T = 25°C

10 12 14 16 18 20

120

160

200

Gate-to-Source Voltage (V)

I , Drain Current (A)

GS,

Figure 1 Typical On-Resistance vs. Gate Voltage

Figure 2 Typical On-Resistance vs. Drain Current

Final Datasheet

www.infineon.com

Please read the important Notice and Warnings at the end of this document

V2.2

2019-02-20

12 3 4 5 6 7...18

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