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IRF7749L2PBF

更新时间： 2024-11-28 01:11:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 319K
描述
RoHS Compliant, Halogen Free

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IRF7749L2PBF 数据手册

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PD - 97434  
IRF7749L2TRPbF  
IRF7749L2TR1PbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant, Halogen Free   
l Lead-Free (Qualified up to 260°C Reflow)  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
VDSS  
VGS  
RDS(on)  
1.1mΩ@ 10V  
Vgs(th)  
60V min ±20V max  
Qg tot  
Qgd  
l Low Conduction Losses  
l High Cdv/dt Immunity  
200nC  
71nC  
2.9V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
l Industrial Qualified  
S
S
S
S
S
S
S
S
G
D
D
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7749L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package  
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems.  
The IRF7749L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses  
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system  
reliability improvements, and makes this device ideal for high performance power converters.  
Absolute Maximum Ratings  
Max.  
60  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
±20  
200  
140  
33  
V
GS  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
I
@ TC = 25°C  
D
D
D
D
A
@ TC = 100°C  
@ TA = 25°C  
@ TC = 25°C  
375  
800  
260  
120  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
mJ  
A
Avalanche Current  
1.60  
1.40  
1.20  
1.00  
0.80  
12.0  
10.0  
8.0  
V
V
V
V
= 6.0V  
= 8.0V  
= 10V  
= 14V  
T
= 25°C  
I
= 120A  
GS  
GS  
GS  
GS  
C
D
6.0  
T
T
= 25°C  
J
4.0  
= 125°C  
J
2.0  
0.0  
4.0  
6.0  
V
8.0  
10.0 12.0 14.0 16.0  
40  
80  
120  
160  
200  
, Gate-to-Source Voltage (V)  
GS  
I , Drain Current (A)  
D
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Drain Current  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/17/09  
1234567...11

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