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IRF7749L1PBF

更新时间： 2024-11-28 01:17:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 275K
描述
Optimized for Synchronous Rectification

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IRF7749L1PBF 数据手册

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IRF7749L1TRPbF  
Applications  
l RoHS Compliant, Halogen Free ‚  
l Lead-Free (Qualified up to 260°C Reflow)   
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
1.1mΩ@ 10V  
Vgs(th)  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
60V min ±20V max  
Qg tot  
Qgd  
l Low Conduction Losses  
200nC  
71nC  
2.9V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
S
S
S
S
S
S
S
S
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
l Industrial Qualified  
G
D
D
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling  
to maximize thermal transfer in power systems.  
The IRF7749L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device  
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,  
and makes this device ideal for high performance power converters.  
Ordering Information  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
IRF7749L1TRPbF  
DirectFET Large Can  
IRF7749L1TRPbF  
Absolute Maximum Ratings  
Max.  
60  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
±20  
200  
140  
33  
V
GS  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
I
@ TC = 25°C  
D
D
D
D
A
@ TC = 100°C  
@ TA = 25°C  
@ TC = 25°C  
375  
800  
260  
120  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
1.60  
1.40  
1.20  
1.00  
0.80  
12.0  
10.0  
8.0  
V
V
V
V
= 6.0V  
= 8.0V  
= 10V  
= 14V  
T
= 25°C  
I
= 120A  
GS  
GS  
GS  
GS  
C
D
6.0  
T
T
= 25°C  
J
4.0  
= 125°C  
J
2.0  
0.0  
40  
80  
120  
160  
200  
4.0  
6.0  
V
8.0  
10.0 12.0 14.0 16.0  
I
, Drain Current (A)  
, Gate-to-Source Voltage (V)  
D
GS  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Drain Current  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A.  
1
www.irf.com  
© 2012 International Rectifier  
February 18, 2013  
1234567...10

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