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IRF7739L1

更新时间： 2024-11-30 11:15:31
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英飞凌 - INFINEON /
页数 文件大小 规格书
11页 277K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

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IRF7739L1 数据手册

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IRF7739L1TRPbF  
Applications  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant, Halogen Free ‚  
l Lead-Free (Qualified up to 260°C Reflow)  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
VDSS  
VGS  
RDS(on)  
0.70mΩ@ 10V  
Vgs(th)  
40V min ±20V max  
Qg tot  
Qgd  
l Optimized for Synchronous Rectification  
220nC  
81nC  
2.8V  
l Low Conduction Losses  
l High Cdv/dt Immunity  
S
S
S
S
l Low Profile (<0.7mm)  
S
S
S
S
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
l Industrial Qualified  
D
D
G
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling  
to maximize thermal transfer in power systems.  
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the  
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance power converters.  
Ordering Information  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
IRF7739L1TRPbF  
DirectFET Large Can  
IRF7739L1TRPbF  
Absolute Maximum Ratings  
Max.  
40  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
±20  
270  
190  
46  
V
GS  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
I
@ TC = 25°C  
D
D
D
D
@ TC = 100°C  
@ TA = 25°C  
@ TC = 25°C  
A
375  
1070  
270  
160  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
8
0.93  
0.92  
0.91  
0.90  
0.89  
0.88  
0.87  
0.86  
0.85  
V
= 10V  
I
= 160A  
GS  
D
T
= 25°C  
J
6
4
T
= 125°C  
7.5  
J
2
0
5.0  
5.5  
V
6.0  
6.5  
7.0  
8.0  
0
40  
80  
120  
160  
200  
I
, Drain Current (A)  
D
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Drain Current  
Notes:  
 Click on the hyperlink (to the relevant technical document) for more details.  
‚ Click on the hyperlink (to the DirectFET website) for more details  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.  
1
www.irf.com  
© 2012 International Rectifier  
February 13 ,2013  
1234567...11

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