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IRF7748L1TRPBF

更新时间： 2024-11-30 01:06:59
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英飞凌 - INFINEON /
页数 文件大小 规格书
10页 442K
描述
DirectFET™ Power MOSFET

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IRF7748L1TRPBF 数据手册

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IRF7748L1TRPbF  
DirectFET™ Power MOSFET  
Typical values (unless otherwise specified)  
Applications  
VDSS  
VGS  
±20V max  
Qgd  
RDS(on)  
1.7m@ 10V  
Vgs(th)  
RoHS Compliant, Halogen Free   
Lead-Free (Qualified up to 260°C Reflow)   
Ideal for High Performance Isolated Converter  
Primary Switch Socket  
60V min  
Qg tot  
Optimized for Synchronous Rectification  
Low Conduction Losses  
146nC  
40nC  
2.9V  
High Cdv/dt Immunity  
Low Profile (<0.7mm)  
S
S
S
S
S
S
Dual Sided Cooling Compatible   
Compatible with existing Surface Mount Techniques   
Industrial Qualified  
D
D
G
L6  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor  
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods  
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.  
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses  
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-  
tem reliability improvements, and makes this device ideal for high performance power converters.  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
IRF7748L1TRPbF  
DirectFET Large Can  
IRF7748L1TRPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
60  
±20  
148  
104  
28  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
V
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
Single Pulse Avalanche Energy   
Avalanche Current   
A
IDM  
EAS  
IAR  
592  
129  
mJ  
A
89  
8
6
4
2
0
3.0  
I
= 89A  
D
V
= 6V  
GS  
2.5  
2.0  
1.5  
1.0  
V
= 7V  
GS  
V
= 10V  
= 12V  
GS  
GS  
T
= 125°C  
J
V
T
= 25°C  
J
0
25  
50  
75  
100  
125  
150  
175  
200  
2
4
6
8
10  
12  
14  
16  
18  
20  
I
, Drain Current (A)  
D
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical On-Resistance vs. Drain Current  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes  
TC measured with thermocouple mounted to top (Drain) of part.  
Repetitive rating; pulse width limited by max. junction temperature.  
Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A.  
Click on this section to link to the appropriate technical paper.  
Click on this section to link to the DirectFET Website.  
Surface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com  
© 2012 International Rectifier  
February 18, 2013  
1234567...10

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