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IRF7737L2TRPBF

更新时间： 2024-11-27 21:01:11
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英飞凌 - INFINEON /
页数 文件大小 规格书
10页 239K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRF7737L2TRPBF 数据手册

 浏览型号IRF7737L2TRPBF的Datasheet PDF文件第2页浏览型号IRF7737L2TRPBF的Datasheet PDF文件第3页浏览型号IRF7737L2TRPBF的Datasheet PDF文件第4页浏览型号IRF7737L2TRPBF的Datasheet PDF文件第5页浏览型号IRF7737L2TRPBF的Datasheet PDF文件第6页浏览型号IRF7737L2TRPBF的Datasheet PDF文件第7页 
PD - 96414  
IRF7737L2TRPbF  
IRF7737L2TR1PbF  
DirectFET® Power MOSFET ‚  
V(BR)DSS  
40V  
•
•
Advanced Process Technology  
Optimized for Industrial Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
Repetitive Avalanche Capability for Robustness and  
Reliability  
Lead Free, RoHS Compliant and Halogen Free  
RDS(on) typ.  
1.5m  
1.9m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
•
•
•
•
•
156A  
89nC  
S
S
S
S
S
S
•
D
D
G
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
L6  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to  
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package  
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package  
allows dual sided cooling to maximize thermal transfer.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement  
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to  
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current  
applications.  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
40  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
± 20  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
156  
I
I
I
@ T = 25°C  
C
D
D
D
110  
@ T = 100°C  
C
31  
A
@ TA = 25°C  
ID @ TC = 25°C  
315  
624  
I
DM  
83  
P
P
@TC = 25°C  
@TA = 25°C  
Power Dissipation  
D
D
W
3.3  
Power Dissipation  
EAS  
104  
386  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
A
See Fig.18a, 18b, 16, 17  
EAR  
Repetitive Avalanche Energy  
mJ  
270  
Peak Soldering Temperature  
T
T
T
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
1.8  
RθJA  
RθJCan  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
0.5  
0.56  
Linear Derating Factor  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
10/27/11  
1234567...10

中文翻译

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IRF7737L2TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7737L2TR INFINEON

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