Datasheet > IRF7663PBF

IRF7663PBF

更新时间： 2024-09-16 12:46:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	151K
描述
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

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IRF7663PBF 数据手册

PD-95634

IRF7663PbF

HEXFET^®Power MOSFET

Trench Technology

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Lead-Free

V_DSS= -20V

_DS(on)= 0.020Ω

Top View

Description

New trench HEXFET^®power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

withanextremelyefficientandreliabledeviceforuseinawide

varietyofapplications.

The new Micro8™ package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applicationswhereprintedcircuitboardspaceisatapremium.

Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily

intoextremelythinapplicationenvironmentssuchasportable

electronics and PCMCIA cards.

MICRO8™

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-SourceVoltage

-20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-8.2

-6.6

-66

P_D@T_A= 25°C

P_D@T_A= 70°C

PowerDissipation

1.8

PowerDissipation

1.15

LinearDeratingFactor

mW/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-SourceVoltage

115

V_GS

± 12

T_J,T_STG

JunctionandStorageTemperatureRange

-55 to + 150

°C

Thermal Resistance

Parameter

MaximumJunction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

8/11/04

12 3 4 5 6 7

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